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Electrical properties of undoped and doped MOVPE-grown InAsSb

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dc.contributor.author Krug, T
dc.contributor.author Botha, L
dc.contributor.author Shamba, P
dc.contributor.author Baisitse, TR
dc.contributor.author Venter, A
dc.contributor.author Engelbrecht, JAA
dc.contributor.author Botha, JR
dc.date.accessioned 2007-06-29T09:49:00Z
dc.date.available 2007-06-29T09:49:00Z
dc.date.issued 2006
dc.identifier.citation Krug, T, et al. 2006. Electrical properties of undoped and doped MOVPE-grown InAsSb. Journal of Crystal Growth, vol. 298, pp 163-167 en
dc.identifier.issn 0022-0248
dc.identifier.uri http://hdl.handle.net/10204/828
dc.description Copyright: 2006 Elsevier Science BV en
dc.description.abstract Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties. en
dc.language.iso en en
dc.publisher Elsevier Science BV en
dc.subject Hall measurements en
dc.subject Surface morphology en
dc.subject Analysis methods en
dc.subject Two-layer models en
dc.title Electrical properties of undoped and doped MOVPE-grown InAsSb en
dc.type Article en
dc.identifier.apacitation Krug, T., Botha, L., Shamba, P., Baisitse, T., Venter, A., Engelbrecht, J., & Botha, J. (2006). Electrical properties of undoped and doped MOVPE-grown InAsSb. http://hdl.handle.net/10204/828 en_ZA
dc.identifier.chicagocitation Krug, T, L Botha, P Shamba, TR Baisitse, A Venter, JAA Engelbrecht, and JR Botha "Electrical properties of undoped and doped MOVPE-grown InAsSb." (2006) http://hdl.handle.net/10204/828 en_ZA
dc.identifier.vancouvercitation Krug T, Botha L, Shamba P, Baisitse T, Venter A, Engelbrecht J, et al. Electrical properties of undoped and doped MOVPE-grown InAsSb. 2006; http://hdl.handle.net/10204/828. en_ZA
dc.identifier.ris TY - Article AU - Krug, T AU - Botha, L AU - Shamba, P AU - Baisitse, TR AU - Venter, A AU - Engelbrecht, JAA AU - Botha, JR AB - Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at very low doping concentrations. A two-layer model is presented which can potentially be used to extract the bulk layer properties of a semiconductor epilayer. We here apply this model to two different materials, InAs and InAsSb, and extract their transport properties. DA - 2006 DB - ResearchSpace DP - CSIR KW - Hall measurements KW - Surface morphology KW - Analysis methods KW - Two-layer models LK - https://researchspace.csir.co.za PY - 2006 SM - 0022-0248 T1 - Electrical properties of undoped and doped MOVPE-grown InAsSb TI - Electrical properties of undoped and doped MOVPE-grown InAsSb UR - http://hdl.handle.net/10204/828 ER - en_ZA


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