dc.contributor.author |
Mathe, Mahlanyane K
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dc.contributor.author |
Cox, SM
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dc.contributor.author |
Venkatasamy, V
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dc.contributor.author |
Happek, U
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dc.contributor.author |
Stickney, JL
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dc.date.accessioned |
2007-08-23T06:54:12Z |
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dc.date.available |
2007-08-23T06:54:12Z |
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dc.date.issued |
2005-09 |
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dc.identifier.citation |
Mathe, MK et al. 2005. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. Journal of the Electrochemical society, Vol 152(11), pp C751-C755 |
en |
dc.identifier.issn |
0013-4651 |
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dc.identifier.uri |
http://hdl.handle.net/10204/1153
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dc.description |
Copyright: 2005 Electrochemical Society |
en |
dc.description.abstract |
The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV. |
en |
dc.language.iso |
en |
en |
dc.publisher |
Electrochemical Society |
en |
dc.subject |
Electrochemical atomic layer epitaxy |
en |
dc.subject |
HgSe thin films |
en |
dc.subject |
Ethylenediaminetetraacetic acid |
en |
dc.subject |
X-ray diffraction analysis |
en |
dc.subject |
Stoichiometric deposits |
en |
dc.title |
Formation of HgSe thin films using electrochemical atomic Layer epitaxy |
en |
dc.type |
Article |
en |
dc.identifier.apacitation |
Mathe, M. K., Cox, S., Venkatasamy, V., Happek, U., & Stickney, J. (2005). Formation of HgSe thin films using electrochemical atomic Layer epitaxy. http://hdl.handle.net/10204/1153 |
en_ZA |
dc.identifier.chicagocitation |
Mathe, Mahlanyane K, SM Cox, V Venkatasamy, U Happek, and JL Stickney "Formation of HgSe thin films using electrochemical atomic Layer epitaxy." (2005) http://hdl.handle.net/10204/1153 |
en_ZA |
dc.identifier.vancouvercitation |
Mathe MK, Cox S, Venkatasamy V, Happek U, Stickney J. Formation of HgSe thin films using electrochemical atomic Layer epitaxy. 2005; http://hdl.handle.net/10204/1153. |
en_ZA |
dc.identifier.ris |
TY - Article
AU - Mathe, Mahlanyane K
AU - Cox, SM
AU - Venkatasamy, V
AU - Happek, U
AU - Stickney, JL
AB - The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result in the formation of an atomic layer of an element, under controlled potential. HgSe thin films were formed on gold substrates using two reactant solutions: a solution of Hg2+ complexed with ethylenediaminetetraacetic acid and a HSeO3 ion solution. X-ray diffraction analysis showed a zinc blende structure for the deposits, with a strong (111) preferred texture, and an average grain size of 425 delta. Electron probe microscope analysis showed near-stoichiometric deposits. Fourier transform infrared spectroscopy reflection absorption measurements suggest two bandgaps: 0.42 and 0.88 eV.
DA - 2005-09
DB - ResearchSpace
DP - CSIR
KW - Electrochemical atomic layer epitaxy
KW - HgSe thin films
KW - Ethylenediaminetetraacetic acid
KW - X-ray diffraction analysis
KW - Stoichiometric deposits
LK - https://researchspace.csir.co.za
PY - 2005
SM - 0013-4651
T1 - Formation of HgSe thin films using electrochemical atomic Layer epitaxy
TI - Formation of HgSe thin films using electrochemical atomic Layer epitaxy
UR - http://hdl.handle.net/10204/1153
ER -
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en_ZA |